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| 型号： | ZXMP6A17E6TA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 3A SOT-23-6 |
| 其它图纸： | SOT-23-6 Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 637pF @ 30V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMP6A17E6DKR |
A Product Line of
Diodes Incorporated
ZXMP6A17E6
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 5)
Symbol
V DSS
V GS
Value
-60
± 20
-3.0
Unit
V
V
Continuous Drain current
V GS = 10V
T A = 70°C (Note 5)
I D
-2.4
A
(Note 4)
-2.3
Pulsed Drain current
V GS = 10V
(Note 6)
I DM
-13.6
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 5)
(Note 6)
I S
I SM
-2.5
-13.6
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
T J , T STG
1.1
8.8
1.92
15.4
113
65
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (4), except the device is measured at t ≤ 5 sec.
6. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
2 of 8
www.diodes.com
December 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMP6A17GTA | MOSFET P-CH 60V 3A SOT223 |
| ZXMP6A17KTC | MOSFET P-CH 60V 4.4A DPAK |
| ZXMP6A17N8TC | MOSFET P-CH 60V 2.7A SO8 |
| ZXMP6A18DN8TA | MOSFET 2P-CH 60V 4.6A 8-SOIC |
| ZXMP6A18KTC | MOSFET P-CHAN 60V DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMP6A17E6TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A17G | 制造商:Diodes Incorporated 功能描述: |
| ZXMP6A17GQTA | 制造商:Diodes Incorporated 功能描述:FET - Tape and Reel |
| ZXMP6A17GTA | 功能描述:MOSFET 60V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMP6A17GTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223 |
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