参数资料
型号: ZXSC100N8TC
厂商: Diodes Inc
文件页数: 5/13页
文件大小: 0K
描述: IC REG CTRLR BST PWM 8-SOIC
标准包装: 2,500
PWM 型: 控制器
输出数: 1
频率 - 最大: 200kHz
占空比: 90%
电源电压: 0.926 V ~ 1 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
配用: ZXSC100-EVAL-ND - BOARD EVALUATION FOR ZXSC100
ZXSC100X8 Obsolete
Closest Alternative is ZXSC100N8
ZXSC100
SINGLE CELL DC-DC CONVERTER SOLUTION
Device Description
The ZXSC100 is non-synchronous PFM, DC-DC controller IC which, when combined with a high performance external
transistor, enables the production of a high efficiency boost converter for use in single cell applications. A block diagram is
shown for the ZXSC100 on page 2.
A shutdown circuit turns the device on or off at V CC = 1V with a hysteresis of typically 80mV. At start up, comparator Comp1
turns the driver circuit and therefore the external switching transistor on. This circuit will remain active until the feedback
voltage at the pin FB rises above V REF , which is set to 730mV. An external resistive divider on the FB pin sets the output
voltage level.
Comparator Comp2 forces the driver circuit and the external switching transistor off, if the voltage at I SENSE exceeds 25mV.
The voltage at I SENSE is taken from a current sense resistor connected in series with the emitter of the switching transistor.
A monostable following the output of Comp2 extends the turn-off time of the output stage by a minimum of 2μs. This ensures
that there is sufficient time to discharge the inductor coil before the next on period. The AND gate between the monostable
and Comp1 output ensures that the switching transistor always remains on until the I SENSE threshold is reached and that the
minimum discharge period is always asserted. The pulse width is constant, the pulse frequency varies with the output load.
The driver circuit supplies the external switching transistor with a defined current, which is programmed by an external
resistor connected between the RE pin and V CC . The internal reference voltage for the circuit is 25mV below V CC . To
maximise efficiency the external transistor is switched quickly, typically being forced off within 20ns.
In higher power applications more current can be supplied to the switching transistor by using a further external component.
The driver transistor in the IC can be bypassed with the addition of a discrete PNP. More information on this circuit
configuration can be found in the applications section.
ZXSC100
Document number: DS33613 Rev. 6 - 2
5 of 13
January 2012
? Diodes Incorporated
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