参数资料
型号: μPD481850
厂商: NEC Corp.
英文描述: Synchronous Graphics Memory (SGRAM)(8M 同步图形存储器)
中文描述: 同步图形存储器(SGRAM)(8分同步图形存储器)
文件页数: 45/94页
文件大小: 1180K
代理商: ΜPD481850
Preliminary Data Sheet
45
μ
PD481850 for Rev.L
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1
-A10
105
mA
1
t
RC
t
RC(MIN.)
, I
O
= 0
mA
-A12
90
Precharge standby current
I
CC2
P
CKE
V
IL(MAX.)
, t
CK
=
15
ns
7
mA
in power down mode
I
CC2
PS CKE
V
IL(MAX.)
, t
CK
=
CKE
V
IH(MIN.)
, t
CK
=
15
ns, /CS
V
IH(MIN.)
,
Input signals are changed one time
during 30
ns.
I
CC2
NS CKE
V
IH(MIN.)
, t
CK
=
Input signals are stable.
I
CC3
P
CKE
V
IL(MAX.)
, t
CK
=
15
ns
6
Precharge standby current
in non power down mode
I
CC2
N
36
mA
22
Active standby current in
7
mA
power down mode
I
CC3
PS CKE
V
IL(MAX.)
, t
CK
=
CKE
V
IH(MIN.)
, t
CK
=
15
ns, /CS
V
IH(MIN.)
,
Input signals are changed one time
during 30
ns.
I
CC3
NS CKE
V
IH(MIN.)
, t
CK
=
Input signals are stable.
6
Active standby current in
non power down mode
I
CC3
N
36
mA
22
Operating current
I
CC4
t
CK
t
CK(MIN.)
/CAS latency = 2
-A10
155
mA
2
(Burst mode)
I
O
= 0
mA
-A12
130
/CAS latency = 3
-A10
200
-A12
170
Refresh current
I
CC5
t
RC
t
RC(MIN.)
-A10
85
mA
3
-A12
80
Self refresh current
I
CC6
CKE
0.2
V
t
CK
t
CK(MIN.)
, I
O
= 0
mA,
/CAS cycle = 20 ns
V
I
=
0 to 3.6
V,
All other pins not under
test =
0 V
6
mA
Operating current
(Block Write Mode)
Input leakage current
I
CC7
250
mA
I
I(L)
–5.0
+5.0
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–5.0
+5.0
μ
A
High level output voltage
V
OH
I
O
=
2.0
mA
2.4
V
Low level output voltage
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
V
OL
I
O
=
+
2.0
mA
0.4
V
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