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参数资料
| 型号： | 0910-150 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, 55KT, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 122K |
| 代理商： | 0910-150 |
0910-150Rel 1
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
GENERAL DESCRIPTION
The 0910-150 is an internally matched, COMMON BASE transistor capable of
providing 150 Watts of pulsed RF output power at fifty microseconds pulse
width, two percent duty factor across the band 870 to 1000 MHz. This
hermetically solder-sealed transistor is specifically designed for P-Band radar
applications. It utilizes gold metallization to provide high reliability.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
oC
400 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
60 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
12 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200
oC
Operating Junction Temperature
+ 200
oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
ηc
Pd
Rl
VSWR
1
VSWRs
Power Out
Power Gain
Collector Efficiency
Pulse Droop
Input Return loss
Load Mismatch Tolerance
Load Mismatch - Stability
Freq = 870 – 1000 MHz
Vcc = 36 Volts
Pin = 18 Watts
Pulse Width = 50
s
Duty Factor = 2%
150
9.2
50
9
55
200
0.3
3:1
2:1
Watts
dB
%
dB
Note 1: Pulse condition of 50
sec, 2%.
Bvces
Ices
Iebo
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage
Thermal Resistance
Ic = 5 mA
Vce = 40 Volts
Vebo = 3.0 Volts
Rated Pulse Condition
50
10
5.0
0.44
Volts
mA
oC/W
Issue Mar 2005
0910 – 150
150 Watts - 36 Volts, 50
s, 2%
Radar 870 - 1000 MHz
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