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参数资料
| 型号： | 100BGQ100J |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 100 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | POWIRTAB-1 |
| 文件页数： | 2/6页 |
| 文件大小： | 124K |
| 代理商： | 100BGQ100J |
100BGQ100, 100BGQ100J
Bulletin PD-20999 rev. B 12/02
www.irf.com
2
Voltage Ratings
V
FM
Forward Voltage Drop
(1)
(2)
0.80 0.84
V
@
50A
0.96 1.04
V
@ 100A
0.64 0.66
V
@
50A
0.74 0.77
V
@ 100A
I
RM
Reverse Leakage Current (1)
22
300
A
TJ = 25 °C
14
18
mA
TJ = 125°C
V
F(TO)
Threshold Voltage
0.484
V
T
J
=
T
J
max.
r
t
Forward Slope Resistance
2.0
m
C
T
Max. Junction Capacitance
1320
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
3.5
nH
Measured from tab to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R
)
T
J
Max.JunctionTemperatureRange
-55to175
°C
T
stg
Max.StorageTemperatureRange
-55to175
°C
R
thJC
Max.ThermalResistanceJunction
0.50
°C/W
DCoperation
toCase
R
thCS
Typical Thermal Resistance,Case to
0.20
°C/W
Mountingsurface,smoothandgreased
Heatsink
wt
ApproximateWeight
5(0.18)
g(oz.)
T
MountingTorque
Min.
1.2(10)
Max.
2.4(20)
Case Style
PowIRtabTM
N*m
(Ibf-in)
Thermal-Mechanical Specifications
Parameters
Values
Units
Conditions
I
F(AV)
Max.AverageForwardCurrent
100
A
50%dutycycle@T
C
=129°C,rectangularwaveform
I
F(RMS)
RMS ForwardCurrent
141
A
T
C
=120°C
I
FSM
Max.PeakOneCycleNon-Repetitive
6300
5s Sine or 3s Rect. pulse
SurgeCurrent
800
10ms Sine or 6ms Rect. pulse
E
AS
Non-RepetitiveAvalancheEnergy
9
mJ
T
J
= 25 °C, I
AS
= 2 Amps, L = 4.5 mH
I
AR
RepetitiveAvalancheCurrent
2
A
Currentdecayinglinearlytozeroin1sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Parameters
Values
Units
Conditions
Absolute Maximum Ratings
A
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters
Values
Units
Conditions
Typ.
Max.
(1) Pulse Width < 300s, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Part number
100BGQ100, 100BGQ100J
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
100
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