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| 型号： | 11AA010T-I/TT |
| 厂商： | Microchip Technology |
| 文件页数： | 3/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 100KHZ SOT23-3 |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1443 (CN2011-ZH PDF) |
| 其它名称： | 11AA010T-I/TTDKR |
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11AAXXX/11LCXXX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................6.5V
SCIO w.r.t. V SS .....................................................................................................................................-0.6V to V CC +1.0V
Storage temperature ................................................................................................................................. -65°C to 150°C
Ambient temperature under bias............................................................................................................... -40°C to 125°C
ESD protection on all pins.......................................................................................................................................... 4 kV
? NOTICE : Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
DC CHARACTERISTICS
Industrial (I): V CC = 2.5V to 5.5V
V CC = 1.8V to 2.5V
Automotive (E): V CC = 2.5V to 5.5V
T A = -40°C to +85°C
T A = -20°C to +85°C
T A = -40°C to +125°C
Param.
No.
D1
Sym.
V IH
Characteristic
High-level input
Min.
0.7*V CC
Max.
V CC +1
Units
V
Test Conditions
voltage
D2
D3
V IL
V HYS
Low-level input
voltage
Hysteresis of Schmitt
-0.3
-0.3
0.05*Vcc
0.3*V CC
0.2*V CC
—
V
V
V
V CC ??? 2.5V
V CC < 2.5V
V CC ??? 2.5V (Note 1)
Trigger inputs (SCIO)
D4
D5
D6
D7
V OH
V OL
I O
I LI
High-level output
voltage
Low-level output
voltage
Output current limit
(Note 2)
Input leakage current
V CC -0.5
V CC -0.5
—
—
—
—
—
—
—
0.4
0.4
±4
±3
±1
V
V
V
V
mA
mA
? A
I OH = -300 ? A, V CC = 5.5V
I OH = -200 ? A, Vcc = 2.5V
I O I = 300 ? A, V CC = 5.5V
I O I = 200 ? A, Vcc = 2.5V
V CC = 5.5V (Note 1)
Vcc = 2.5V (Note 1)
V IN = V SS or V CC
(SCIO)
D8
C INT
Internal Capacitance
—
7
pF
T A = 25°C, F CLK = 1 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note 1)
D9
D10
I CC Read Read Operating
Current
I CC Write Write Operating
Current
—
—
—
—
3
1
5
3
mA
mA
mA
mA
V CC =5.5V; F BUS =100 kHz, C B =100 pF
V CC =2.5V; F BUS =100 kHz, C B =100 pF
V CC = 5.5V
V CC = 2.5V
D11
Iccs
Standby Current
—
5
? A
V CC = 5.5V
T A = 125°C
—
1
? A
V CC = 5.5V
T A = 85°C
D12
I CCI
Idle Mode Current
—
50
? A
V CC = 5.5V
Note 1:
2:
This parameter is periodically sampled and not 100% tested.
The SCIO output driver impedance will vary to ensure I O is not exceeded.
? 2010 Microchip Technology Inc.
Preliminary
DS22067H-page 3
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