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参数资料
| 型号： | 11LC161-E/P |
| 厂商： | Microchip Technology |
| 文件页数： | 12/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16K SER AUTO 8DIP |
| 标准包装： | 60 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
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11AAXXX/11LCXXX
4.3 Write Instruction
Prior to any attempt to write data to the 11XX, the write
enable latch must be set by issuing the WREN
instruction (see Section 4.4).
Once the write enable latch is set, the user may pro-
ceed with issuing a WRITE instruction (including the
header and device address bytes) followed by the MSB
and LSB of the Word Address. Once the last Acknowl-
edge sequence has been performed, the master
transmits the data byte to be written.
The 11XX features a 16-byte page buffer, meaning that
up to 16 bytes can be written at one time. To utilize this
feature, the master can transmit up to 16 data bytes to
the 11XX, which are temporarily stored in the page buf-
fer. After each data byte, the master sends a MAK, indi-
cating whether or not another data byte is to follow. A
NoMAK indicates that no more data is to follow, and as
such will initiate the internal write cycle.
Note: If a NoMAK is generated before any data
has been provided, or if a standby pulse
occurs before the NoMAK is generated,
the 11XX will be reset, and the write
cycle will not be initiated.
Upon receipt of each word, the four lower-order
Address Pointer bits are internally incremented by one.
The higher-order bits of the word address remain con-
stant. If the master should transmit data past the end of
the page, the address counter will roll over to the begin-
ning of the page, where further received data will be
written.
Note: Page write operations are limited to writ-
ing bytes within a single physical page,
regardless of the number of bytes actu-
ally being written. Physical page bound-
aries start at addresses that are integer
multiples of the page size (16 bytes) and
end at addresses that are integer multi-
ples of the page size minus 1. As an
example, the page that begins at
address 0x30 ends at address 0x3F. If a
page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to
the beginning of the current page (over-
writing data previously stored there),
instead of being written to the next page
as might be expected. It is therefore
necessary for the application software to
prevent page write operations that
would attempt to cross a page bound-
ary.
FIGURE 4-3:
WRITE COMMAND SEQUENCE
SCIO
SCIO
Standby Pulse
Command
0 1 1 0 1 1 0 0
Data Byte 1
Start Header
0 1 0 1 0 1 0 1
Word Address MSB
15 14 13 12 11 10 9 8
Data Byte 2
Device Address
1 0 1 0 0 0 0 0 (1)
Word Address LSB
7 6 5 4 3 2 1 0
Data Byte n
SCIO
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
Twc
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
DS22067H-page 12
Preliminary
? 2010 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 11LC161-ESN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC161-ETO | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC161-ETT | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC161-I/MS | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 11LC161-I/P | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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