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参数资料
| 型号： | 16CTQ080 |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 314K |
| 代理商： | 16CTQ080 |
16CTQ..., 16CTQ...S, 16CTQ...-1 Series
2
Bulletin PD-20192 rev. M 07/06
www.irf.com
16CTQ060
16CTQ80
16CTQ100
16CTQ060S
16CTQ80S
16CTQ100S
16CTQ060-1
16CTQ80-1
16CTQ100-1
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
60
80
100
Voltage Ratings
Parameters
Absolute Maximum Ratings
Parameters
Values Units
Conditions
I
F(AV) Max. Average Forward
(Per Leg)
8
A
50% duty cycle @ T
C = 148°C, rectangular wave form
Current
* See Fig. 5
(Per Device)
16
I
FSM
Max. Peak One Cycle Non-Repetitive
850
5μs Sine or 3μs Rect. pulse
Surge Current (Per Leg)
* See Fig. 7
275
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
7.50
mJ
T
J = 25 °C, IAS = 0.50 Amps, L = 60 mH
(Per Leg)
I
AR
Repetitive Avalanche Current
0.50
A
Current decaying linearly to zero in 1 μsec
(Per Leg)
Frequency limited by T
J max. VA = 1.5 x VR typical
A
T
J
Max. Junction Temperature Range
-55 to 175
°C
T
stg
Max. Storage Temperature Range
-55 to 175
°C
R
thJC Max. Thermal Resistance Junction
3.25
°C/W DC operation
to Case (Per Leg)
R
thJC Max. Thermal Resistance Junction
1.63
°C/W DC operation
to Case (Per Package)
R
thCS Typical Thermal Resistance, Case
0.50
°C/W Mounting surface , smooth and greased
to Heatsink
(only for TO-220)
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Thermal-Mechanical Specifications
Kg-cm
(Ibf-in)
Parameters
Values Units
Conditions
V
FM
Max. Forward Voltage Drop
0.72
V
@ 8A
(Per Leg) * See Fig. 1
(1)
0.88
V
@ 16A
0.58
V
@ 8A
0.69
V
@ 16A
I
RM
Max. Reverse Leakage Current
0.55
mA
T
J =
25 °C
(Per Leg) * See Fig. 2
(1)
7.0
mA
T
J = 125 °C
V
F(TO) Threshold Voltage
0.415
V
T
J =
T
J max
rt
Forward Slope Resistance
11.07
m
Ω
CT
Max. Junction Capacitance(Per Leg)
500
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance (Per Leg)
8.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/ μs
(Rated V
R)
T
J =
25 °C
T
J = 125 °C
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
V
R = rated VR
Parameters
Values Units
Conditions
Following any rated
load condition and with
rated VRRM applied
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 16CTQ080-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 8 A |
| 16CTQ080-1PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 8 A |
| 16CTQ080-1TRL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 8 A |
| 16CTQ080-1TRLPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 8 A |
| 16CTQ080-1TRR | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 8 A |
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