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参数资料
| 型号： | 1N4004GP/56 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 102K |
| 代理商： | 1N4004GP/56 |
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Document Number: 88504
Revision: 02-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Junction Rectifier
FEATURES
Superectifier structure for high reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, typical IR less than
0.1 A
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies,
inverters,
converters
and
freewheeling
diodes for both consumer and automotive applications.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
5.0 A
VF
1.1 V
TJ max.
175 °C
Patented*
DO-204AL (DO-41)
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Note:
(1) JEDEC registered values
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP UNIT
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage (1)
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage (1)
VDC
50
100
200
400
600
800
1000
V
Maximum average forward
rectified current 0.375" (9.5 mm)
lead length at TA = 75 °C
(1)
IF(AV)
1.0
A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load (1)
IFSM
30
A
Maximum full load reverse
current, full cycle average 0.375"
(9.5 mm) lead length
TA = 75 °C
(1)
IR(AV)
30
A
Operating junction and
storage temperature range (1)
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4004GP/92 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4004GPE/68 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4004GPE/72 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4004GPE/91 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4004GPE/56 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4004GPE/16 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4004GPE/20 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4004GPE/23 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4004GPE/4 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4004GPE/41 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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