参数资料
型号: 1N4004GP/56
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 3/5页
文件大小: 102K
代理商: 1N4004GP/56
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Document Number: 88504
Revision: 02-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
0.375" (9.5 mm)
Lead Length
60 Hz
Resistive or
Inductive Load
Ambient Temperature (°C)
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
5
10
1
100
10
15
20
25
30
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0
0.01
0.1
1
10
60
80
100
20
40
T
J = 100 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
0.1
10
1
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
10
1
100
0.1
10
100
1
T
ransient
Ther
mal
Impedance
(°C/
W
)
t - Pulse Duration (s)
相关PDF资料
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1N4004GP/92 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
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