参数资料
型号: 1N4007T50R
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
封装: D4, 2 PIN
文件页数: 1/3页
文件大小: 43K
代理商: 1N4007T50R
1N4001-1N4007
1N4001-1N4007, Rev. C
2001 Fairchild Semiconductor Corporation
1N4001 - 1N4007
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Features
Low forward voltage drop.
High surge current capability.
Symbol
Parameter
Device
Units
4001
4002
4003
4004
4005 4006 4007
V
F
Forward Voltage @ 1.0 A
1.1
V
Irr
Maximum Full Load Reverse Current, Full
Cycle
T
A = 75°C
30
A
I
R
Reverse Current @ rated V
R TA = 25°C
T
A = 100°C
5.0
500
A
CT
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
15
pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
4001
4002
4003
4004
4005 4006 4007
VRRM
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
IF(AV)
Average Rectified Forward Current,
.375 " lead length @ TA = 75°C
1.0
A
I
FSM
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
30
A
T
stg
Storage Temperature Range
-55 to +175
°C
TJ
Operating Junction Temperature
-55 to +175
°C
Symbol
Parameter
Value
Units
P
D
Power Dissipation
3.0
W
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
Thermal Characteristics
相关PDF资料
PDF描述
1N4001G-13 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1N4002G-13 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1N4003G-13 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1N4005G-13 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1N4001GH02 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
相关代理商/技术参数
参数描述
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