参数资料
型号: 1N4247
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 600 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED PACKAGE-2
文件页数: 1/2页
文件大小: 93K
代理商: 1N4247
POWER DISCRETES
1
www.semtech.com
1N4245, 1N4246, 1N4247,
1N4248, 1N4249
General Purpose Silicon Rectifiers
Features
Revision: May 30, 2007
1 Amp 55°C/no heat sink
Monolithic non-cavity construction
Fused metal oxide hermetic seal
Superior thermal shock resistance
Low thermal impedance
Low reverse leakage
PIV to 1000 volts
Electrical Specifications
Electrical specifications: All temperatures are local ambient , 25°C unless otherwise specified.
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Description
These products can be supplied as JAN, JANTX or
JANTXV per MIL-S-19500/286
Notes:
(1) The 1.0 amp rating @ 55°C requires no heat sinking, special mounting, or forced air across the body of the
device.
(2) Recovery conditions: 0.5 Amp forward current to -1.0 Amp reverse current. Recovery time measured when
rectifier recovers to -.25 Amp.
Storage temperature: -65°C to +175°C.
Quick reference data
V
R =
200V - 1000V
IF = 1.0A
t
rr = 2S
V
F
= 1.2V
相关PDF资料
PDF描述
1N5614 1 A, 200 V, SILICON, SIGNAL DIODE
1N4454 0.2 A, SILICON, SIGNAL DIODE, DO-35
1N643 0.04 A, SILICON, SIGNAL DIODE, DO-7
1N4534 0.15 A, SILICON, SIGNAL DIODE, DO-34
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