参数资料
型号: 1N457.TR
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 参考电压二极管
英文描述: 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
文件页数: 2/2页
文件大小: 36K
代理商: 1N457.TR
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
Breakdown Voltage
456/A
457/A
458/A
459/A
IR = 100
A
IR = 100
A
IR = 100
A
IR = 100
A
30
70
150
200
V
IR
Reverse Current
456/A
457/A
458/A
459/A
VR = 25 V
VR = 25 V, TA = 150
°C
VR = 60 V
VR = 60 V, TA = 150
°C
VR = 125 V
VR = 125 V, TA = 150
°C
VR = 175 V
VR = 175 V, TA = 150
°C
25
5.0
25
5.0
25
5.0
25
5.0
nA
A
nA
A
nA
A
nA
A
VF
Forward Voltage
456
457
458
459
456/A-459/A
IF = 40 mA
IF = 10 mA
IF = 7.0 mA
IF = 3.0 mA
IF = 100 mA
1.0
V
CO
Diode Capacitance
VR = 0, f = 1.0 MHz
6.0
pF
Electrical Characteristics
TA = 25°C unless otherwise noted
1N/FDLL
456/A
/
457/A
/
458/A
/
459/A
High Conductance Low Leakage Diode
(continued)
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