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参数资料
| 型号： | 1N4749ATA2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 封装： | GLASS, CASE 59-03, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 55K |
| 代理商： | 1N4749ATA2 |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-3
500 mW DO-35 Glass Data Sheet
Figure 2. Temperature Coefficients
(–55
°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
a. Range for Units to 12 Volts
b. Range for Units to 12 to 100 Volts
+12
+10
+8
+6
+4
+2
0
–2
–4
2
3
456
78
9
10
11
12
VZ, ZENER VOLTAGE (VOLTS)
θ
V
Z
,TEMPERA
TURE
COEFFICIENT
(mV/
°C)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
70
100
VZ, ZENER VOLTAGE (VOLTS)
θ
V
Z
,TEMPERA
TURE
COEFFICIENT
(mV/
°C)
VZ @IZT
RANGE
VZ @IZT
Figure 3. Typical Thermal Resistance
versus Lead Length
Figure 4. Effect of Zener Current
175
150
125
100
75
50
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
L, LEAD LENGTH TO HEAT SINK (INCHES)
θ
JL
,JUNCTION-T
O-LEAD
THERMAL
RESIST
ANCE
(mV/
°C/W)
θ
V
Z
,TEMPERA
TURE
COEFFICIENT
(mV/
°C)
+6
+4
+2
0
–2
–4
3
4
56
78
VZ, ZENER VOLTAGE (VOLTS)
VZ @IZ
TA =25°C
20 mA
0.01 mA
1mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
Figure 5. Maximum Surge Power
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
P
pk
,PEAK
SURGE
POWER
(W
A
TTS)
11 V–100 V NONREPETITIVE
3.3 V–10 V NONREPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECTANGULAR
WAVEFORM
TJ =25°C PRIOR TO
INITIAL PULSE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4749A-TAP | 功能描述:稳压二极管 24 Volt 1.3 Watt RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N4749A-TP | 功能描述:稳压二极管 1.0W 24V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N4749ATR | 功能描述:稳压二极管 24V 1W ZENER 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N4749A-TR | 功能描述:稳压二极管 24 Volt 1.3 Watt RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N4749A-TR/BKN | 制造商:Vishay Semiconductors 功能描述:Diode, Zener; 24 V @ 10.5 mA; 1 W @ +50C (Ambient); DO-41; 25 Ohms @ 10.5 mA |
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