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参数资料
| 型号： | 1N4935GPHE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 71K |
| 代理商： | 1N4935GPHE3/54 |
Document Number: 88509
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Junction Fast Switching Rectifier
1N4933GP thru 1N4937GP
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Fast switching for high efficiency
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 600 V
IFSM
30 A
trr
200 ns
IR
5.0 μA
VF
1.2 V
TJ max.
175 °C
DO-204AL (DO-41)
SUPERECTIFIER
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
145
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4934GPT50A | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4935-E3/54 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4936-E3/73 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4937-E3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4942GP-E3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4935GP-M3/54 | 功能描述:DIODE GEN PURP 200V 1A DO204AL 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101 包装:带卷（TR） 零件状态:有效 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:200V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:200ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 200V 不同?Vr，F 时的电容:15pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-204AL（DO-41） 工作温度 - 结:-65°C ~ 175°C 标准包装:5,500 |
| 1N4935GP-M3/73 | 功能描述:DIODE GEN PURPOSE DO-204AL 制造商:vishay semiconductor diodes division 系列:* 零件状态:停產 标准包装:3,000 |
| 1N4935GP-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 200V 1A 2-Pin DO-41 T/R |
| 1N4935G-T | 功能描述:整流器 1.0A 200V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4935G-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A GLASS PASSIVATED FAST RECOVERY DIODE |
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