- 您现在的位置：买卖IC网 > PDF目录293751 > 1N5061GP/70 (VISHAY SEMICONDUCTORS) 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC PDF资料下载
参数资料
| 型号： | 1N5061GP/70 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封装： | PLASTIC, DO-15, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 328K |
| 代理商： | 1N5061GP/70 |
1N5059GP thru 1N5062GP
Document Number 88513
17-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 800 V
IFSM
50 A
IR
5.0 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5059GP 1N5060GP 1N5061GP 1N5062GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
* Maximum DC blocking voltage
VDC
200
400
600
800
V
* Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
* Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length at
TA = 25 °C
TA = 75 °C
IR(AV)
5.0
150
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5062GP/4E | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5237B-GT3 | 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5226B-T3 | 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5228B-T3 | 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5240B-T3 | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5061GP-E3/1 | 功能描述:整流器 600 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5061GP-E3/4 | 功能描述:整流器 1.0 Amp 600 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5061GP-E3/51 | 功能描述:整流器 1.0 Amp 600 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5061GP-E3/54 | 功能描述:整流器 1.0 Amp 600 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5061GPHE3/54 | 功能描述:整流器 600 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。