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参数资料
| 型号： | 1N5338B/TR8 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 5.1 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | PLASTIC, T-18, 2 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 356K |
| 代理商： | 1N5338B/TR8 |
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Avnet PartBuilder - Home Page Products Discrete Diode Zener X 1N5333BE3/TR8
Microsemi
Datasheet
1N5333BE3/TR8
Diode Zener Single 3.3V 5% 1.47W 2-Pin Case T-18 T/R
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Part Details
Microsemi1N5333BE3/TR8
Diode Zener Single 3.3V 5% 1.47W 2-Pin Case T-
18 T/R
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Description
Value
Package
2Case T-18
Configuration
Single
Nominal Zener Voltage
3.3 V
Zener Voltage
Tolerance
5 %
Maximum Zener
Impedance
3 Ohm
Maximum Regulator
Current
1440 mA
Maximum Reverse
Leakage Current
300 uA
Type
Voltage Regulator
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Page 1 of 1
Microsemi 1N5333BE3/TR8, 2Case T-18, Single, 3.3 V, 5 % - Avnet Express
17-Nov-2011
http://avnetexpress.avnet.com/store/em/EMController/Zener/Microsemi/1N5333BE3-T...
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5338C | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon 5 Watt Zener Diodes |
| 1N5338C/TR12 | 功能描述:DIODE ZENER 5.1V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:5.1V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1.5 欧姆 不同?Vr 时的电流 - 反向漏电流:1μA @ 1V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:3,000 |
| 1N5338C/TR8 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 5.1V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 5.1V 2% T-18 |
| 1N5338CE3/TR12 | 功能描述:DIODE ZENER 5.1V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:5.1V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1.5 欧姆 不同?Vr 时的电流 - 反向漏电流:1μA @ 1V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:3,000 |
| 1N5338CE3/TR13 | 功能描述:DIODE ZENER 5.1V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:5.1V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1.5 欧姆 不同?Vr 时的电流 - 反向漏电流:1μA @ 1V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:1,250 |
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