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参数资料
| 型号： | 1N5363BTA |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 30 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | PLASTIC, CASE 17-02, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 87K |
| 代理商： | 1N5363BTA |
1N5333B through 1N5388B
Motorola TVS/Zener Device Data
6-4
5 Watt Surmetic 40 Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
Figure 5. Typical Thermal Resistance
Figure 6. Maximum Non-Repetitive Surge Current
versus Nominal Zener Voltage
(See Note 3)
θ
JL
(t,
D),
TRANSIENT
THERMAL
RESIST
ANCE
JUNCTION-T
O-LEAD
( °
C/W)
20
10
5
2
1
0.5
0.2
0.00
1
0.00
5
0.01
0.05
0.1
0.5
1
5
10
20
50
100
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.01
D = 0
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
DUTY CYCLE, D = t1/t2
SINGLE PULSE
TJL = θJL(t)PPK
REPETITIVE PULSES
TJL = θJL(t, D)PPK
PPK
t1
t2
t, TIME (SECONDS)
40
30
20
10
0
0.2
0.4
0.6
0.8
1
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
L
L, LEAD LENGTH TO HEAT SINK (INCH)
JL
,JUNCTION-T
O-LEAD
THERMAL
RESIST
ANCE
(
θ
°C/W)
i r
,PEAK
SURGE
CURRENT
(AMPS)
40
20
10
4
2
1
0.1
0.2
0.4
3
4
6
8 10
20
30
40
60 80 100
200
*SQUARE WAVE
PW = 100 ms*
PW = 1000 ms*
PW = 1 ms*
PW = 8.3 ms*
NOMINAL VZ (V)
30
20
10
0.1
0.2
0.5
1
2
5
1
10
100
0
1000
100
10
1
0.1
1
2
3
4
5
6
7
8
9
10
I Z
,ZENER
CURRENT
(mA)
PW, PULSE WIDTH (ms)
VZ, ZENER VOLTAGE (VOLTS)
Figure 7. Peak Surge Current versus Pulse Width
(See Note 3)
Figure 8. Zener Voltage versus Zener Current
VZ = 3.3 thru 10 Volts
VZ = 200 V
VZ = 3.3 V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
TC = 25°C
T = 25
°C
i r
,PEAK
SURGE
CURRENT
(AMPS)
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相关代理商/技术参数 |
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|---|---|
| 1N5363B-TP | 功能描述:稳压二极管 5.0W 30V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5363C/TR12 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 30V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 30V 2% T-18 |
| 1N5363C/TR8 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 30V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 30V 2% T-18 |
| 1N5363CE3/TR12 | 功能描述:DIODE ZENER 30V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:30V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:8 欧姆 不同?Vr 时的电流 - 反向漏电流:500nA @ 21.6V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:3,000 |
| 1N5363CE3/TR13 | 功能描述:DIODE ZENER 30V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:30V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:8 欧姆 不同?Vr 时的电流 - 反向漏电流:500nA @ 21.6V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:1,250 |
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