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参数资料
| 型号： | 1N5363BTA |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 30 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | PLASTIC, CASE 17-02, 2 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 87K |
| 代理商： | 1N5363BTA |
1N5333B through 1N5388B
Motorola TVS/Zener Device Data
6-5
5 Watt Surmetic 40 Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
I Z
,ZENER
CURRENT
(mA)
VZ, ZENER VOLTAGE (VOLTS)
1000
100
10
1
0.1
10
20
30
40
50
60
70
80
100
10
1
0.1
80
100
120
140
160
180
200
220
VZ, ZENER VOLTAGE (VOLTS)
I Z
,ZENER
CURRENT
(mA)
T = 25
°C
Figure 9. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
Figure 10. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 5 for dc power.
TJL = θJL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = θVZ TJ
θVZ,thezenervoltagetemperaturecoefficient,isfoundfrom
Figures 2 and 3.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 4 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 6. They are lower
than would be expected by considering only junction tempera-
ture, as current crowding effects cause temperatures to be ex-
tremely high in small spots resulting in device degradation
should the limits of Figure 6 be exceeded.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5363B-TP | 功能描述:稳压二极管 5.0W 30V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5363C/TR12 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 30V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 30V 2% T-18 |
| 1N5363C/TR8 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 30V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 30V 2% T-18 |
| 1N5363CE3/TR12 | 功能描述:DIODE ZENER 30V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:30V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:8 欧姆 不同?Vr 时的电流 - 反向漏电流:500nA @ 21.6V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:3,000 |
| 1N5363CE3/TR13 | 功能描述:DIODE ZENER 30V 5W T18 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:30V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:8 欧姆 不同?Vr 时的电流 - 反向漏电流:500nA @ 21.6V 不同 If 时的电压 - 正向（Vf）:1.2V @ 1A 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:T-18，轴向 供应商器件封装:T-18 标准包装:1,250 |
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