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参数资料
| 型号： | 1N5711 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 70 V, SILICON, SIGNAL DIODE, DO-204AH |
| 封装： | GLASS, DO-35, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 101K |
| 代理商： | 1N5711 |
1N5711 and 1N6263
Schottky Diodes
Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak Inverse Voltage
1N5711
VRRM
70
V
1N6263
60
Power Dissipation (Infinite Heatsink)
Ptot
400(1)
mW
Maximum Single Cycle Surge 10
s Square Wave
IFSM
2.0
A
Thermal Resistance Junction to Ambient Air
R
ΘJA
0.3(1)
°C/mW
Junction Temperature
Tj
125(1)
°C
Storage Temperature Range
TS
–55 to +150(1)
°C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
1N5711
V(BR)R
IR = 10
A
70
—
V
1N6263
60
—
Leakage Current
IR
VR = 50V
—
200
nA
Forward Voltage Drop
VF
IF = 1mA
—
0.41
V
IF = 15mA
—
1.0
Junction Capacitance
1N5711
Ctot
VR = 0V, f = 1MHz
—
2.0
pF
1N6263
2.2
Reverse Recovery Time
trr
IF = IR = 5mA,
——
1
ns
recover to 0.1IR
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
8/27/01
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5818G | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5819-1 | 1 A, SILICON, SIGNAL DIODE, DO-41 |
| 1N5819UR | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| 1N5819 | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N5819 | 1 Amp Schottky Rectifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5711#T25 | 功能描述:肖特基二极管与整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5711#T50 | 功能描述:肖特基二极管与整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5711 | 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY RF |
| 1N5711/D7 | 制造商:Vishay Intertechnologies 功能描述:RECTIFIER DIODE,SCHOTTKY,70V V(RRM),DO-204AH |
| 1N5711-1 | 制造商:Microsemi Corporation 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 70V 0.033A 2-PIN DO-35 - Bulk 制造商:Microsemi 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-35 |
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