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参数资料
| 型号： | 1N5806D2B-JQRS.GCDE |
| 厂商： | SEMELAB LTD |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 150 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 193K |
| 代理商： | 1N5806D2B-JQRS.GCDE |
ULTRAFAST RECOVERY
RECTIFIER DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab plc
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8318
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 2
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 1 of 4
1N5806D2A / 1N5806D2B
Hermetic Ceramic Package Designed as a Drop-
In Replacement for D-5A MELF Package
Designed For High Rel Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VRRM
Maximum Reverse Repetitive Peak Voltage
150V
VRMS
Maximum RMS Voltage
105V
Vdc
Maximum DC Blocking Voltage
150V
IO
Maximum Rectified Current Io2 = TA +55°C (1)
1.0A
Derate above TA 55°C
8.33mA/°C
IFSM
Non Repetitive Forward Surge Current (2)
35A
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
T
TT
THERMAL PROPERTIES
HERMAL PROPERTIES
Symbols
Parameters
Max.
Max. Units
Units
RθJSP(IN)
Thermal Resistance, Junction To Solder Pads TSP =25°C
34
°C/W
RθJA(PCB) Thermal Resistance, Junction To Ambient (3)
150
°C/W
Note
Notessss
(1) IO2 is rated at 1.0A @ TA = 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where
TJ(Max) does not exceed 175°C; This equates to RθJA(PCB) ≤ 154°C/W.
(2) TA = 25°C @ IO=1.0A and VRWM for ten 8.3mS surges at 1 minute intervals.
(3) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (0.067” x 0.105”), (1.7mm x 2.76mm) , horizontal in still air.
Recommended solder pad layout dimensions for this device, as detailed within this datasheet for the D-5A device.
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相关代理商/技术参数 |
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| 1N5806E3 | 制造商:Microsemi Corporation 功能描述:1N5806E3 - Bulk |
| 1N5806E3/TR | 功能描述:UFR,FRR 制造商:microsemi corporation 系列:- 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）:2.5A 不同 If 时的电压 - 正向（Vf:975mV @ 2.5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:25ns 不同?Vr 时的电流 - 反向漏电流:1μA @ 150V 不同?Vr，F 时的电容:25pF @ 10V，1MHz 安装类型:通孔 封装/外壳:A，轴向 供应商器件封装:A，轴向 工作温度 - 结:-65°C ~ 175°C 标准包装:100 |
| 1N5806JANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N5806JTXV | 制造商:SEM 功能描述: |
| 1N5806SM | 制造商:Semtech Corporation 功能描述: |
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