参数资料
型号: 1N5817/70
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 2/4页
文件大小: 179K
代理商: 1N5817/70
www.vishay.com
2
Document Number 88525
13-Jul-05
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol
1N5817
1N5818
1N5819
Unit
Maximum instantaneous
forward voltage
at 1.0 (1)
VF
0.450
0.550
0.600
V
Maximum instantaneous
forward voltage
at 3.1 (1)
VF
0.750
0.875
0.900
V
Maximum average reverse
current at rated DC blocking
voltage (1)
TA = 25 °C
TA = 100 °C
IR
1.0
10
mA
Typical junction capacitance
at 4.0 V, 1.0 MHz
CJ
110
pF
Parameter
Symbol
1N5817
1N5818
1N5819
Unit
Typical thermal resistance(1)
RθJA
RθJL
50
15
°C/W
Figure 1. Forward Current Derating Curve
0
0.25
0.5
0.75
0
40
60
20
80
100
120
140
1.0
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 HZ
1
10
100
0
5
10
15
20
25
30
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