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| 型号： | 1N5822RL |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 123K |
| 描述： | DIODE SCHOTTKY 40V 3A DO201AD |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 525mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 40V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 剪切带 (CT) |
| 其它名称： | 1N5822RLOSCT |
   1N5820, 1N5821, 1N5822 http://onsemi.com 4 NOTE 3 — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = T J(max) R JAPF(AV) where TA(max) = Maximum allowable ambient temperature RJAPR(AV)(1) TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = T J(max) R JAPR(AV) (2) Substituting equation (2) into equation (1) yields: TA(max) = T R R JAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125 °C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V (FM) F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5821 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (I F(AV) = 1.0 A), I (FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA = 40°C/W. Step 1. Find VR(equiv).Read F = 0.65 from Table 1, VR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read T R = 108 °C @ VR = 9.2 V and R JA = 40 °C/W. Step 3. Find PF(AV) from Figure 6. **Read P F(AV) = 0.85 W @I(FM)I(AV) 10 and IF(AV) 1.0A. Step 4. Find TA(max) from equation (3). TA(max) = 108 (0.85) (40) = 74 °C. **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using PF(AV) from Figure 6. Table 1. Values for Factor F Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*? Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK) 2.0 V in(PK). ?Use line to center tap voltage for Vin. |
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相关代理商/技术参数 |
参数描述 |
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| 1N5822RLG | 功能描述:肖特基二极管与整流器 3A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5822RLG-CUT TAPE | 制造商:ON 功能描述:1N5822 Series 3 A 40 V Schottky Axial Lead Rectifier - DO-201AD |
| 1N5822S | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5822-T | 功能描述:肖特基二极管与整流器 Vr/40V Io/3A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5822T&R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 40V 3A 2-Pin DO-201AD T/R |
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