参数资料
型号: 1N5822RL
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 123K
描述: DIODE SCHOTTKY 40V 3A DO201AD
产品变化通告: Product Obsolescence 19/Jun/2009
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 525mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 2mA @ 40V
安装类型: 通孔
封装/外壳: DO-201AA,DO-27,轴向
供应商设备封装: DO-201AD
包装: 剪切带 (CT)
其它名称: 1N5822RLOSCT
1N5820, 1N5821, 1N5822
http://onsemi.com
5
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. Steady-State Thermal Resistance
3.0 4.0 7.0 10 2015
75
2.0
VR, REVERSE VOLTAGE (VOLTS)
115
125
105
5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.030
75
4.0
VR, REVERSE VOLTAGE (VOLTS)
125
115
105
95
85
L, LEAD LENGTH (INCHES)
1/8
0
0
25
20
15
10
5.0
2/8
40
T
R
, REFERENCE TEMPERATURE ( C)
T
R
JL
, THERMAL RESISTANCE
95
85
5.0
°
40
35
30
JUNCTION-TO-LEAD ( C/W)
°
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
, REFERENCE TEMPERATURE ( C)
R
°
RJA
(
°C/W) = 70
50
40
28
20
15
10
8.0
3.0 4.0 7.0 10 2015
VR, REVERSE VOLTAGE (VOLTS)
115
105
T
R
, REFERENCE TEMPERATURE ( C)
95
85
75
5.0
°
RJA
(
°C/W) = 70
50
40
28
20
15
10
8.0
125
30
RJA
(
°C/W) = 70
50
40
28
20
15
10
8.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
LEAD LENGTH = 1/4″
Ppk
Ppk
tp
t1
TIME
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL
= P
pk
?
R
JL
[D + (1 - D)
?
r(t
1
+ t
p) + r(tp) - r(t1)] where:
TJL
= the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1
+ t
p) = normalized value of transient thermal resistance at time
t1
+ t
p, etc.
Figure 5. Thermal Response
20 k
The temperature of the lead should be measured using a ther‐
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady-state conditions are achieved. Using the measured
value of TL, the junction temperature may be determined by:
TJ
= T
L
+
TJL
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