参数资料
型号: 1N6263W-7-F
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 109K
描述: DIODE SCHOTTKY 60V 333MW SOD123
产品变化通告: Encapsulate Change 29/Aug/2008
其它图纸: SOD-123 Side 1
SOD-123 Side 2
SOD-123 Top
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 15mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 15mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 1ns
电流 - 在 Vr 时反向漏电: 200nA @ 50V
电容@ Vr, F: 2.2pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123
供应商设备封装: SOD-123
包装: 标准包装
产品目录页面: 1595 (CN2011-ZH PDF)
其它名称: 1N6263W-FDIDKR
1N6263W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
?
Low Forward Voltage Drop
?
Guard Ring Construction for Transient Protection
?
Fast Switching Time
?
Low Reverse Capacitance
?
Surface Mount Package Ideally Suited for Automated Insertion
?
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
?
Case: SOD-123
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Solderable per MIL-STD-202, Method 208
?
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe)
?
Polarity: Cathode Band
?
Marking Information: See Page 2
?
Ordering Information: See Page 2
?
Weight: 0.01 grams (approximate)
Top View
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
VR
60
V
RMS Reverse Voltage
VR(RMS)
42
V
Forward Continuous Current
IF
15
mA
Non-Repetitive Peak Forward Surge Current @ t ≤
1.0s
@ t = 10ms
IFSM
50
2.0
mA
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
PD
333
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RθJA
300
°C/W
Operating Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
60
?
?
V
IR = 10μA
Reverse Leakage Current (Note 2)
IRM
?
?
200
nA
VR
= 50V
Forward Voltage Drop
VFM
?
?
0.41
1.0
V
IF = 1.0mA
IF
= 15mA
Total Capacitance
CT
?
?
2.2
pF
VR
= 0V, f = 1.0MHz
Reverse Recovery Time
trr
?
?
1.0
ns
IF
= I
R
= 5.0mA
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used
to minimize self-heating effect.
3. No purposefully added lead.
Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2O3
Fire Retardants.
1N6263W
Document number: DS11014 Rev. 14 - 2
1 of 3
www.diodes.com
July 2008
? Diodes Incorporated
相关PDF资料
PDF描述
1N6392 DIODE SCHOTTKY 45V 60A DO-5
1N916B DIODE HI CONDUCTANCE 100V DO-35
1PS10SB82,315 DIODE SCHOTTKY 15V 30MA SOD882
1PS193,115 DIODE 80V 215MA HI-SPEED SC59
1PS59SB10,115 DIODE SCHOTTKY 30V 300MA SC59
相关代理商/技术参数
参数描述
1N6263WS 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON SCHOTTKY BARRIER DIODE
1N6263WT 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON SCHOTTKY BARRIER DIODE
1N6264 功能描述:红外发射源 6mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
1N6264_Q 功能描述:红外发射源 6mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
1N6265 功能描述:红外发射源 6mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk