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| 型号： | 1N6302-E3/54 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIR 1.5KW 180V 10% 1.5KE |
| 标准包装： | 1,400 |
| 系列： | TransZorb® |
| 电压 - 反向隔离（标准值）： | 146V |
| 电压 - 击穿： | 162V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | 1.5KE |
| 包装： | 带卷 (TR) |
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
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Vishay General Semiconductor
THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
SYMBOL
R ? JA
R ? JL
VALUE
75
15.4
UNIT
°C/ W
ORDERING INFORMATION (Example)
PREFERRED PIN
1.5KE6.8A-E3/54
1.5KE6.8AHE3/54 (1)
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)
100
150
t r = 10 μs
T J = 25 °C
P u lse Width (t d )
is defined as the Point
10
100
Peak V al u e
I PPM
w here the Peak C u rrent
decays to 50 % of I PPM
Half V al u e - I PP
I PPM
2
1
0.1
50
0
t d
10/1000 μs Wa v eform
as defined b y R.E.A.
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0
1.0
2.0
3.0
4.0
t d - P u lse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
100
75
10 000
t - Time (ms)
Fig. 3 - Pulse Waveform
Uni-Directional
Bi-Directional
V R = 0
1000
50
100
V R = Rated
Stand-Off V oltage
25
T J = 25 °C
f = 1.0 MHz
V sig = 50 m V p-p
0
0
25
50
75
100
125
150
175
200
10
5
10
100
500
T J - Initial Temperat u re (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
V BR - Breakdo w n V oltage ( V )
Fig. 4 - Typical Junction Capacitance
Revision: 22-Jan-14
3
Document Number: 88301
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6302L | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:TRANSIENT VOLTAGE SUPPRESSOR |
| 1N6303 | 制造商:Distributed By MCM 功能描述:SUB ONLY DIODE 200V 1.0MA DO-2 |
| 1N6303A | 功能描述:TVS 二极管 - 瞬态电压抑制器 200V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6303A/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 200V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6303A/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 200V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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