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参数资料
| 型号： | 1N6302-E3/54 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIR 1.5KW 180V 10% 1.5KE |
| 标准包装： | 1,400 |
| 系列： | TransZorb® |
| 电压 - 反向隔离（标准值）： | 146V |
| 电压 - 击穿： | 162V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | 1.5KE |
| 包装： | 带卷 (TR) |
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
100
10
www.vishay.com
100
10
Vishay General Semiconductor
1
0.1
T J = 25 °C
P u lse Width = 300 μs
1 % D u ty Cycle
1
0.1
0
0.4
0. 8
1.2
1.6
2.0
0.001
0.01
0.1
1
10
100
1000
Instantaneo u s For w ard V oltage ( V )
Fig. 11 - Instantaneous Forward Voltage Characteristics Curve
t p - P u lse D u ration (s)
Fig. 12 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case S tyle 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5 )
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
APPLICATION NOTES
? This series of Silicon Transient Suppressors is used in
applications where large voltage transients can
permanently damage voltage-sensitive components.
? The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60). ?
? This Transient Voltage Suppressor diode has a pulse
power rating of 1500 W for 1 ms. The response time of
TVS diode clamping action is effectively instantaneous
(1 x 10 -9 s bi-directional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and other
voltage sensitive semiconductors and components. TVS
diodes can also be used in series or parallel to increase
the peak power ratings.
Revision: 22-Jan-14
5
Document Number: 88301
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6302L | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:TRANSIENT VOLTAGE SUPPRESSOR |
| 1N6303 | 制造商:Distributed By MCM 功能描述:SUB ONLY DIODE 200V 1.0MA DO-2 |
| 1N6303A | 功能描述:TVS 二极管 - 瞬态电压抑制器 200V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6303A/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 200V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6303A/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 200V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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