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参数资料
| 型号： | 1N6374/70 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 91K |
| 代理商： | 1N6374/70 |
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
www.vishay.com
Document Number: 88356
Revision: 04-Sep-07
116
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in uni-directional and bi-directional
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
PPPM
1500 W
PD
6.5 W
IFSM
200 A
TJ max.
175 °C
Case Style 1.5KE
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
1500
W
Peak pulse current with a 10/1000 s waveform (1) (Fig. 3)
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 8)
PD
6.5
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A for uni-directional only
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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相关代理商/技术参数 |
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| 1N6374-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374-E3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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