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参数资料
型号： 1N6374/70
厂商： VISHAY SEMICONDUCTORS
元件分类： 参考电压二极管
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装： ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件页数： 3/5页
文件大小： 91K
代理商： 1N6374/70
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
www.vishay.com
Document Number: 88356
Revision: 04-Sep-07
118
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width (s)
P
PPM
-
Peak
P
u
lse
Po
w
er
(k
W
)
1.0 s
10 s
100 s
1.0 ms
10 ms
0.1 s
0.1
1
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
100
75
50
25
0
25
50
75
100
125
150
175
200
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
0
50
100
150
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 s Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Typical Junction Capacitance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
VBR - Breakdown Voltage (V)
C
J-
J
u
nction
Capacitance
(pF)
100
1000
10000
100000
10
1.0
100
200
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
VBR - Breakdown Voltage (V)
C
J-
J
u
nction
Capacitance
(pF)
100
1000
10000
100000
10
1.0
100
200
Bi-Directional Type
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
Number of Cycles at 60 Hz
I FSM
-
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
1
5
10
50
100
10
50
100
200
T
J = TJ max.
8.3 ms Single Half Sine-Wave
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相关代理商/技术参数
参数描述
1N6374-E3/1 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6374-E3/4 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6374-E3/51 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6374-E3/54 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6374-E3/73 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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