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参数资料
| 型号： | 1N6376/1-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, 1.5KE, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 56K |
| 代理商： | 1N6376/1-E3 |
Electrical Characteristics (JEDEC Registered Data) Table 1 – Unidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum(3)
Maximum
Stand-Off
Breakdown
Reverse
Clamping
Peak
General
Voltage
Leakage
Voltage
Pulse
JEDEC
Semiconductor
at 1.0mA
at VWM
at lPP = 1.0A
at lPP = 10A
Current
Type
Part
VWM
V(BR)ID
Vc
IPP
Number
(Volts)
(
A)
(Volts)
(Amps)
1N6373(2)
ICTE-5(2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
Electrical Characteristics (JEDEC Registered Data) Table 1 – Bidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum(3)
Maximum
Stand-Off
Breakdown
Reverse
Clamping
Peak
General
Voltage
Leakage
Voltage
Pulse
JEDEC
Semiconductor
at 1.0mA
at VWM
at lPP = 1.0A
at lPP = 10A
Current
Type
Part
VWM
V(BR)ID
Vc
IPP
Number
(Volts)
(
A)
(Volts)
(Amps)
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
Notes:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated
circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages
are employed.
(4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V(BR) (Breakdown
Voltage) as measured on a specific device.
ICTE5.0 thru ICTE15C Series
TRANSZORB
Transient Voltage Suppressor
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6376-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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