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参数资料
| 型号： | 1N6376/4G-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 1.5KE, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 62K |
| 代理商： | 1N6376/4G-E3 |
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Document Number 88356
www.vishay.com
23-May-03
3
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PPM
)
Der
ating
in
P
ercentage
,%
TA -- Ambient Temperature (
°C)
1
5
10
50
100
Fig. 2 -- Pulse Derating Curve
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I FSM
-
-P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 Hz
C
J-
-J
unction
Capacitance
(pF)
100
1000
10,000
100,000
10
1.0
100
200
V(BR) -- Breakdown Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
10
50
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
C
J-
-
J
unction
Capacitance
(pF)
P
PPM
--
P
eak
Pulse
P
o
w
er
(kW)
0.1
1
10
100
0.1
s
1.0
s10s
td -- Pulse Width (sec.)
100
s
1.0ms
10ms
Fig. 7 --Typical Characteristics Clamping Voltage
V(BR) -- Breakdown Voltage (V)
I PP
--
P
eak
Pulse
Current
(A)
10
50
1
68
VC -- Clamping Voltage (V)
10
12
14
16
18
20
22
24
26
28
Uni-Directional Only
TA = 25
°C
100
1,000
10,000
100,000
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
1
10
100
200
Fig. 4 -- Typical Junction Capacitance
Uni-Directional
Fig. 1 -- Peak Pulse Power Rating Curve
Fig. 5 -- Typical Junction Capacitance
Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
ICTE-5
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
td
Fig. 3 -- Pulse Waveform
TJ = 25
°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
0
1.0
2.0
3.0
4.0
t -- Time (ms)
0
50
100
150
I PPM
--
P
eak
Pulse
Current,
%
I
RSM
tr = 10
sec.
Half Value – IPPM
2
10/1000
sec. Waveform
as defined by R.E.A.
Peak Value
IPPM
Bidirectional Type
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
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| 1N6376-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6376-E3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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