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参数资料
型号： 1N6381
厂商： MICROSEMI CORP-SCOTTSDALE
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装： PLASTIC, CASE 1, 2 PIN
文件页数： 2/3页
文件大小： 174K
代理商： 1N6381
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2008
10-09-2008 REVD
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1N6
373
thru
1N6
389,
e3
MPTE-5
thr
u
MPTE-45
C
,e3
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MICROSEMI
PART NUMBER
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
VOLTS
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
μA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6373
1N6374
1N6375
1N6376
1N6377
MPTE-5
MPTE-8
MPTE-10
MPTE-12
MPTE-15
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.3
13.7
16.1
20.1
7.5
11.5
14.1
16.5
20.6
160
100
90
70
60
1N6378
1N6379
1N6380
1N6381
MPTE-18
MPTE-22
MPTE-36
MPTE-45
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.2
29.8
50.6
63.3
25.2
32.0
54.3
70.0
50
40
23
19
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
1N6382
1N6383
1N6384
1N6385
MPTE-5C
MPTE-8C
MPTE-10C
MPTE-12C
MPTE-15C
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.4
14.1
16.7
20.8
7.5
11.6
14.5
17.1
21.4
160
100
90
70
60
1N6386
1N6387
1N6388
1N6389
MPTE-18C
MPTE-22C
MPTE-36C
MPTE-45C
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.8
30.8
50.6
63.3
25.5
32.0
54.3
70.0
50
40
23
19
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
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相关代理商/技术参数
参数描述
1N6381G 功能描述:TVS 二极管 - 瞬态电压抑制器 52.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6381RL4 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6381RL4G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6382 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6382/1 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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