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参数资料
| 型号： | 1N6463 |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 37K |
| 代理商： | 1N6463 |
1N6461
Thru
1N6468
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
500 Watt Axial Leaded TVS
FEATURES:
500 Watts Peak Pulse Power (tp = 10/1000s)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in JTX, and JTXV versions per
MIL-S-19500/551
DESCRIPTION
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to
MIL-S-19500/551.
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo, & cathode band
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
UNIT
Peak Pulse Power (tp = 10 x 1000s)
Ppk
500
Watts
Operating Temperature
Tj
-65 to +175
°C
Storage Temperature
Tstg
-65 to +175
°C
Steady-State Power Dissipation @ TL = 75C (3/8”)
PD
3
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM
REVERSE
LEAKAGE
CURRENT
IR
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
TEST
CURRENT
IT
MAXIMUM
CLAMPING
VOLTAGE
Vc @ Ipp
PEAK PULSE
CURRENT
Ipp
Tp = 1mS
PEAK PULSE
CURRENT
Ipp
Tp = 20
S
TEMPERATURE
COEFFICIENT
OF VBR
αVz
(V)
(A)
(V)
(mA)
(V)
(A)
% /°C
1N6461
5
3000
5.6
25
9.0
56
315
0.040
1N6462
6
2500
6.5
20
11.0
46
258
0.040
1N6463
12
500
13.6
5
22.6
22
125
0.050
1N6464
15
500
16.4
5
26.5
19
107
0.060
1N6465
24
50
27.0
2
41.4
12
69
0.084
1N6466
30.5
3
33.0
1
47.5
11
63
0.093
1N6467
40.3
2
43.7
1
63.5
8
45
0.094
1N6468
51.6
2
54.0
1
78.5
6
35
0.096
APPLICATIONS:
Aerospace & Industrial Electronics
Board Level Protection
Airborne Systems
Shipboard Systems
Ground Systems
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6463JANTX | 制造商:Microsemi Corporation 功能描述: 制造商:Microwave Semiconductor 功能描述: |
| 1N6463SV | 制造商:Microwave Semiconductor 功能描述: |
| 1N6463US | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 12V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR E_SQ._MELF SD - Bulk |
| 1N6464 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 15V 500W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR E SD - Bulk |
| 1N6464JAN | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 15V 500W 2-Pin Case E 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 15V 500W 2-Pin Case E |
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