| 型号 | 厂商 | 描述 |
| 1n6463 2 |
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6472.tr 2 |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6474hrx |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6472hrv |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6473hrs |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6470hrv |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6470hr |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6474 |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6472 |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6473 |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6470 |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6471hr |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
| 1n6478 |
1 A, SILICON, SIGNAL DIODE, DO-213AB | |
| 1n6479 |
1 A, SILICON, SIGNAL DIODE, DO-213AB | |
| 1n6483 |
1 A, SILICON, SIGNAL DIODE, DO-213AB | |
| 1n647 |
CENTRAL SEMICONDUCTOR CORP | 0.4 A, 400 V, SILICON, SIGNAL DIODE, DO-7 |
| 1n649 |
CENTRAL SEMICONDUCTOR CORP | 0.4 A, 600 V, SILICON, SIGNAL DIODE, DO-7 |
| 1n6480 2 |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB | |
| 1n6481 2 |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB | |
| 1n648 |
TEXAS INSTRUMENTS INC | 0.4 A, SILICON, SIGNAL DIODE |
| 1n6492-jqrs.gbdm 2 3 |
SEMELAB LTD | 45 V, SILICON, RECTIFIER DIODE, TO-205AF |
| 1n6492-jqrs.grpb 2 3 |
SEMELAB LTD | 45 V, SILICON, RECTIFIER DIODE, TO-205AF |
| 1n659 |
FAIRCHILD SEMICONDUCTOR CORP | 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 |
| 1n6621us 2 3 |
2 A, 400 V, SILICON, RECTIFIER DIODE | |
| 1n6623us 2 3 |
1.5 A, 800 V, SILICON, RECTIFIER DIODE | |
| 1n6624us 2 3 |
1.5 A, 900 V, SILICON, RECTIFIER DIODE | |
| 1n6625us 2 3 |
SENSITRON SEMICONDUCTOR | 1.5 A, SILICON, RECTIFIER DIODE |
| 1n6626d3a-jqrs.grpc 2 3 4 |
SEMELAB LTD | 1.75 A, 200 V, SILICON, RECTIFIER DIODE |
| 1n6626d3a-jqrs.ss 2 3 4 |
SEMELAB LTD | 1.75 A, 200 V, SILICON, RECTIFIER DIODE |
| 1n6626d3b-jqrs.gcdm 2 3 4 |
SEMELAB LTD | 1.75 A, 200 V, SILICON, RECTIFIER DIODE |
| 1n6639hrs |
0.3 A, SILICON, SIGNAL DIODE, DO-35 | |
| 1n6640hrv |
0.3 A, SILICON, SIGNAL DIODE, DO-35 | |
| 1n6640hr |
0.3 A, SILICON, SIGNAL DIODE, DO-35 | |
| 1n6641hr |
0.3 A, SILICON, SIGNAL DIODE, DO-35 | |
| 1n663 |
TEXAS INSTRUMENTS INC | 0.06 A, SILICON, SIGNAL DIODE |
| 1n6642csm-jqrs.cvb 2 3 4 |
SEMELAB LTD | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| 1n6642csm-jqrs.grpc 2 3 4 |
SEMELAB LTD | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| 1n6642csm-jqrs.xray 2 3 4 |
SEMELAB LTD | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| 1n6650-1hrv |
1 A, SILICON, SIGNAL DIODE, DO-41 | |
| 1n6653 |
MICROSEMI CORP-LAWRENCE | 20 A, SILICON, RECTIFIER DIODE, TO-59 |
| 1n6707 |
MICROSEMI CORP | 20 A, SILICON, RECTIFIER DIODE |
| 1n6654 |
MICROSEMI CORP-LAWRENCE | 20 A, SILICON, RECTIFIER DIODE |
| 1n6657r |
MICROSEMI CORP-LAWRENCE | 10 A, SILICON, RECTIFIER DIODE |
| 1n6664r |
MICROSEMI CORP-LAWRENCE | 6 A, SILICON, RECTIFIER DIODE |
| 1n6665r |
MICROSEMI CORP-LAWRENCE | 6 A, SILICON, RECTIFIER DIODE |
| 1n6666 |
MICROSEMI CORP-LAWRENCE | 6 A, SILICON, RECTIFIER DIODE |
| 1n6704 2 |
MICROSEMI CORP | 20 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA |
| 1n670r |
MICROSEMI CORP | 20 A, SILICON, RECTIFIER DIODE |
| 1n6711g |
MICROSEMI CORP | 50 A, SILICON, RECTIFIER DIODE |
| 1n6713gr |
MICROSEMI CORP | 50 A, SILICON, RECTIFIER DIODE |