参数资料
型号: 1N6657R
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 整流器
英文描述: 10 A, SILICON, RECTIFIER DIODE
封装: TO-254, 3 PIN
文件页数: 1/1页
文件大小: 93K
代理商: 1N6657R
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/616
T4-LDS-0068 Rev. 1 (082207)
Page 1 of 1
DEVICES
LEVELS
1N6657
1N6657R
JAN
1N6658
1N6658R
JANTX
1N6659
1N6659R
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N6657, R
100
1N6658, R
150
1N6659, R
VRWM
200
Vdc
Average Forward Current (1)
TC = +100°C
IF
15
Adc
Peak Surge Forward Current
IFSM
150
A(pk)
Thermal Resistance - Junction to Case
Rθjc
2.3
°C/W
Note:
(1) Derate @ 300mA/°C above TC = 100°C
(2) Pulse Test; 300S, duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Breakdown Voltage (2)
IR = 500Adc
1N6657, R
1N6658, R
1N6659, R
VBR
100
150
200
Vdc
Forward Voltage (2)
IF = 10Adc
IF = 20Adc
VF1
VF2
1.0
1.2
Vdc
Reverse Leakage Current (2)
VR = 100V
VR = 150V
VR = 200V
1N6657, R
1N6658, R
1N6659, R
IR1
10
Adc
Reverse Leakage Current
VR = 100V, TC = +100°C
VR = 150V, TC = +100°C
VR = 200V, TC = +100°C
1N6657, R
1N6658, R
1N6659, R
IR2
1.0
mAdc
Reverse Recovery Time
IF = 1.0A, IR = 1A, IRR = 100mA
trr
35
nS
Junction Capacitance
VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max
CJ
150
pF
TO-254
1
2
3
1N6657, 1N6658, 1N6659
1
2
3
1N6657R, 1N6658R, 1N6659R
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