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参数资料
| 型号： | 1N914T50R |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 文件页数： | 2/3页 |
| 文件大小： | 43K |
| 代理商： | 1N914T50R |
1N/FDLL
914/A/B
/
916/A/B
/
4148
/
4448
Typical Characteristics
Small Signal Diode
(continued)
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 100 A
I
R = 5.0 A
100
75
V
F
Forward Voltage
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
I
F = 5.0 mA
I
F = 5.0 mA
I
F = 10 mA
I
F = 20 mA
I
F = 20 mA
I
F = 100 mA
620
630
720
730
1.0
mV
V
I
R
Reverse Current
V
R = 20 V
V
R = 20 V, TA = 150°C
V
R = 75 V
25
50
5.0
nA
A
C
T
Total Capacitance
1N916A/B/4448
1N914A/B/4148
V
R = 0, f
= 1.0 MHz
V
R = 0, f
= 1.0 MHz
2.0
4.0
pF
t
rr
Reverse Recovery Time
I
F = 10 mA, VR = 6.0 V (60mA),
I
rr = 1.0 mA, RL = 100
4.0
ns
Electrical Characteristics T
A = 25°C unless otherwise noted
110
120
130
140
150
160
Ta=25
o
C
1
2
3
5
10
20
30
50
100
R
e
vers
e
Vo
lt
a
g
e,
V
R
[V]
Reverse Current, I
R [uA ]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
0
20
40
60
80
100
120
10
20
30
50
70
100
T a= 25
o
C
R
e
v
e
rs
e
C
u
rre
n
t,
I
R
[n
A
]
R everse V oltage, V
R [V ]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
250
300
350
400
450
500
550
1
2
3
5
10
20
30
50
100
Ta= 25
o
C
For
w
a
rd
Vol
tage,
V
R
[mV]
Forward Current, I
F
[uA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
450
500
550
600
650
700
750
0.1
0.2
0.3
0.5
1
2
3
5
10
Ta= 25
o
C
F
o
rw
a
rd
V
o
lta
g
e,
V
F
[m
V
]
Forward Current, I
F [m A ]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
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