参数资料
型号: 1SMB70CAT3G
厂商: ON SEMICONDUCTOR
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE
封装: LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN
文件页数: 2/7页
文件大小: 133K
代理商: 1SMB70CAT3G
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
1SMB5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from JunctiontoLead
PD
RqJL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from JunctiontoAmbient
PD
RqJA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
100
A
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, nonrepetitive.
2. 1 in square copper pad, FR4 board.
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
nonrepetitive duty cycle.
相关PDF资料
PDF描述
1SMC100ABK 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1SMC10ATR13 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1SMC130ATR13 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1SMC13ABK 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1SMC14ABK 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
1SMB75AT3 功能描述:TVS 二极管 - 瞬态电压抑制器 75V 600W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1SMB75AT3G 功能描述:TVS 二极管 - 瞬态电压抑制器 75V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1SMB75CA TR13 功能描述:TVS DIODE 75VWM 121VC SMB 制造商:central semiconductor corp 系列:- 包装:剪切带(CT) 零件状态:停产 类型:齐纳 单向通道:- 双向通道:1 电压 - 反向关态(典型值):75V 电压 - 击穿(最小值):83.3V 电压 - 箝位(最大值)@ Ipp:121V 电流 - 峰值脉冲(10/1000μs):4.9A 功率 - 峰值脉冲:600W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-65°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:DO-214AA,SMB 供应商器件封装:SMB 标准包装:1
1SMB75CAT3 功能描述:TVS 二极管 - 瞬态电压抑制器 75V 600W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1SMB75CAT3G 功能描述:TVS 二极管 - 瞬态电压抑制器 75V 600W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C