参数资料
型号: 1SS193
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.1 A, SILICON, SIGNAL DIODE, TO-236
封装: 1-3G1B, S-MINI, SC-59, TO-236MOD, 3 PIN
文件页数: 1/3页
文件大小: 171K
代理商: 1SS193
1SS193
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
Small package
: SC-59
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF =1mA
0.60
VF (2)
IF = 10mA
0.72
Forward voltage
VF (3)
IF = 100mA
0.90
1.20
V
IR (1)
VR = 30V
0.1
Reverse current
IR (2)
VR = 80V
0.5
μA
Total capacitance
CT
VR = 0, f = 1MHz
0.9
3.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
1.6
4.0
ns
Marking
JEDEC
-
JEITA
SC-59
TOSHIBA
1-3G1B
Weight: 0.012g (typ.)
Unit: mm
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