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参数资料
| 型号： | 1SS360 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | 1-2S1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 222K |
| 代理商： | 1SS360 |
1SS360
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF = 0.92V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2 *
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55
125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.61
―
VF (2)
―
IF = 10mA
―
0.74
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.92
1.20
V
IR (1)
―
VR = 30V
―
0.1
Reverse current
IR (2)
―
VR = 80V
―
0.5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
2.2
4.0
pF
Reverse recovery time
trr
―
IF = 10mA, Fig.1
―
1.6
4.0
ns
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-2S1A
Weight: 2.4mg (typ.)
Unit: mm
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相关代理商/技术参数 |
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|---|---|
| 1SS360(T5L,F,T) | 功能描述:DIODE ARRAY GP 80V 100MA SC75 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:停产 二极管配置:1 对共阳极 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:80V 电流 - 平均整流（Io）（每二极管）:100mA 不同 If 时的电压 - 正向（Vf）:1.2V @ 100mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:4ns 不同?Vr 时的电流 - 反向漏电流:500nA @ 80V 安装类型:表面贴装 封装/外壳:SC-75，SOT-416 供应商器件封装:SC-75 标准包装:1 |
| 1SS360(TE85L,F) | 制造商:Toshiba 功能描述:Diode Switching 85V 0.3A 3-Pin SSM T/R 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=80V,Io=0.1A,AC,SSM |
| 1SS360_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
| 1SS360F | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| 1SS360F(TE85L,F) | 制造商:Toshiba 功能描述:Diode Switching 85V 0.3A 3-Pin ESM T/R Cut Tape |
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