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参数资料
| 型号： | 1Z6.8 |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| 封装： | LEAD FREE, PLASTIC, SC-39, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 161K |
| 代理商： | 1Z6.8 |
1Z6.2~1Z390,1Z6.8A~1Z30A
2006-11-09
3
ZENER CHARACTERISTICS
FORWARD
VOLTAGE
REVERSE
CURRENT
ZENER VOLTAGE
VZ (V)
ZENER
IMPEDANCE
rd ()
TEMPERATURE
COEFFICIENT
OF ZENER
VOLTAGE
αT (mV / °C)
VF (V)
IR (A)
TYPE
MIN.
TYP.
MAX.
MEASURE-
MENT
CURRENT
IZ (mA)
TYP.
MAX.
MEASURE-
MENT
CURRENT
IF (A)
MAX
MEASURE-
MENT
VOLTAGE
VR (V)
1Z51
45.9
51
56.1
65
6
43
68
1.2
0.2
10
40.8
1Z68
61.2
68
74.8
120
4
57
90
1.2
0.2
10
54.4
1Z75
67.5
75
82.5
150
4
66
104
1.2
0.2
10
60
1Z82
73.8
82
90.2
170
3
71
113
1.2
0.2
10
65.4
1Z100
90
100
110
300
3
87
138
1.2
0.2
10
80
1Z110
99
110
121
300
3
96
152
1.2
0.2
10
88
1Z150
135
150
165
450
2
136
212
1.2
0.2
10
120
1Z180
162
180
198
500
1.5
161
255
1.2
0.2
10
144
1Z330
297
330
363
5000
1
297
472
1.2
0.2
10
264
1Z390
351
390
429
10000
0.5
350
555
1.2
0.2
10
312
Handling Precaution
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
P:
We recommend that the worst case power dissipation be no greater than 50% of the absolute
maximum rating of power dissipation. Carry out adequate heat design.
PRSM: We recommend that a device be used within the recommended area in the figure, PRSM-tw.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.
相关PDF资料 |
PDF描述 |
|---|---|
| 1ZB10TPA2 | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1ZB110 | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1ZB11TPA2 | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1ZB11TPA3 | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1ZB11 | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1Z68(Q) | 制造商:Toshiba 功能描述:68V 制造商:Toshiba 功能描述:68V Bulk |
| 1Z6UM | 功能描述:断路器 6A Z Characteristic UL 508 1 POLE RoHS:否 制造商:Phoenix Contact 产品:Device Circuit Breakers 产品类型:Thermomagnetic 电流额定值:2 A 电压额定值 AC:240 V, 277 V 电压额定值 DC:50 V 极数:1 Pole 执行器类型:Slide 电路功能:Trip Free 系列:CB TM1 工作温度范围:- 30 C to + 60 C 照明:No |
| 1Z7.5 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DIODE (CONSTANT VOLTAGE REGULATION) |
| 1Z7.5(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode Zener Single 7.5V 10% 1W 2-Pin DO-15 |
| 1Z7.5A | 制造商:Toshiba America Electronic Components 功能描述:Diode Zener Single 7.5V 5% 1W 2-Pin DO-15 |
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