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参数资料
| 型号： | 20MT120UFPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MTP, 18 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 699K |
| 代理商： | 20MT120UFPBF |
20MT120UF
VCES = 1200V
IC = 40A
T
C = 25°C
UltraFast Non Punch Through (NPT)
Technology
Positive VCE(ON)Temperature Coefficient
10s Short Circuit Capability
HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
Low Diode VF
Square RBSOA
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
I C
Continuos Collector Current
@ TC = 25°C
40
A
@ TC = 106°C
20
I CM
Pulsed Collector Current
100
I LM
Clamped Inductive Load Current
100
I F
Diode Continuous Forward Current
@ TC = 106°C
25
I FM
Diode Maximum Forward Current
100
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power Dissipation (only IGBT)
@ TC = 25°C
240
W
@ TC = 100°C
96
Parameters
Max
Units
UltraFast NPT IGBT
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
MMTP
5/
I27124 rev. D 02/03
1
www.irf.com
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