参数资料
| 型号： | 23A640T-I/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 11/24页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 20MHZ 8SOIC |
| 产品培训模块： | 23x640 and 23x256 SRAM Overview |
| 标准包装： | 3,300 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
23A640/23K640
2.6
Write Status Register Instruction
( WRSR )
The Write Status Register instruction ( WRSR ) allows the
user to write to the bits in the STATUS register as
shown in Table 2-2. This allows for setting of the Device
operating mode. Several of the bits in the STATUS
register must be cleared to ‘ 0 ’. See Figure 2-8 for the
WRSR timing sequence.
FIGURE 2-8:
CS
WRITE STATUS REGISTER TIMING SEQUENCE ( WRSR )
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS Register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Impedance
SO
2.7
Power-On State
The 23X640 powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? A high-to-low-level transition on CS is required to
enter active state
? 2009 Microchip Technology Inc.
Preliminary
DS22126B-page 11
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