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参数资料
| 型号： | 25AA010AT-I/MNY |
| 厂商： | Microchip Technology |
| 文件页数： | 6/38页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SER 1K 1.8V 8TDFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WFDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN（2x3） |
| 包装： | 带卷 (TR) |
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25AA010A/25LC010A
2.0
2.1
FUNCTIONAL DESCRIPTION
Principles of Operation
After setting the write enable latch, the user may
proceed by driving CS low, issuing a WRITE instruction,
followed by the remainder of the address, and then the
data to be written. Up to 16 bytes of data can be sent to
The 25XX010A is a 128 byte Serial EEPROM designed
to interface directly with the Serial Peripheral Interface
(SPI) port of many of today’s popular microcontroller
families, including Microchip’s PIC ? microcontrollers. It
may also interface with microcontrollers that do not
have a built-in SPI port by using discrete I/O lines
programmed properly in firmware to match the SPI
protocol.
The 25XX010A contains an 8-bit instruction register.
the device before a write cycle is necessary. The only
restriction is that all of the bytes must reside in the
same page. Additionally, a page address begins with
XXXX 0000 and ends with XXXX 1111 . If the internal
address counter reaches XXXX 1111 and clock signals
continue to be applied to the chip, the address counter
will roll back to the first address of the page and over-
write any data that previously existed in those
locations.
The device is accessed via the SI pin, with data being
clocked in on the rising edge of SCK. The CS pin must
be low and the HOLD pin must be high for the entire
operation.
Table 2-1 contains a list of the possible instruction
bytes and format for device operation. All instructions,
addresses, and data are transferred MSb first, LSb last.
Data (SI) is sampled on the first rising edge of SCK
after CS goes low. If the clock line is shared with other
peripheral devices on the SPI bus, the user can assert
the HOLD input and place the 25XX010A in ‘HOLD’
mode. After releasing the HOLD pin, operation will
resume from the point when the HOLD was asserted.
Note:
Page write operations are limited to
writing bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size
(or ‘page size’) and, end at addresses that
are integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
2.2
Read Sequence
expected. It is therefore necessary for the
application software to prevent page write
The device is selected by pulling CS low. The 8-bit
READ instruction is transmitted to the 25XX010A
followed by an 8-bit address. See Figure 2-1 for more
details.
After the correct READ instruction and address are sent,
the data stored in the memory at the selected address
is shifted out on the SO pin. Data stored in the memory
at the next address can be read sequentially by
continuing to provide clock pulses to the slave. The
internal Address Pointer automatically increments to
the next higher address after each byte of data is
shifted out. When the highest address is reached
(7Fh), the address counter rolls over to address 00h
allowing the read cycle to be continued indefinitely. The
read operation is terminated by raising the CS pin
(Figure 2-1).
operations that would attempt to cross a
page boundary.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the n th data byte has been clocked in. If CS is driven
high at any other time, the write operation will not be
completed. Refer to Figure 2-2 and Figure 2-3 for more
detailed illustrations on the byte write sequence and
the page write sequence, respectively. While the write
is in progress, the STATUS register may be read to
check the status of the WIP, WEL, BP1 and BP0 bits
(Figure 2-6). Attempting to read a memory array
location will not be possible during a write cycle. Polling
the WIP bit in the STATUS register is recommended in
order to determine if a write cycle is in progress. When
the write cycle is completed, the write enable latch is
reset.
2.3
Write Sequence
Prior to any attempt to write data to the 25XX010A, the
write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS low
and then clocking out the proper instruction into the
25XX010A. After all eight bits of the instruction are
transmitted, CS must be driven high to set the write
enable latch. If the write operation is initiated immedi-
ately after the WREN instruction without CS driven high,
data will not be written to the array since the write
enable latch was not properly set.
DS21832G-page 6
? 2003-2011 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 25AA010ATIOT | 制造商:Microchip Technology Inc 功能描述: |
| 25AA020A | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2K SPI Bus Serial EEPROM |
| 25AA020A/S16K | 功能描述:电可擦除可编程只读存储器 2K, 256 X 8, 1.8V SER EE, DIE in WAFFLE PK RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25AA020A/W16K | 功能描述:电可擦除可编程只读存储器 2K, 256 X 8, 1.8V SER EE, WAFER RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25AA020A/WF16K | 功能描述:电可擦除可编程只读存储器 2K, 256 X 8, 1.8V SER EE, WAFER on FRAME RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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