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| 型号： | 25AA02E48-I/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 2/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 10MHZ 8SOIC |
| 产品培训模块： | MAC Address EEPROMs |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROM - 串行（带 MAC 地址） |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 1448 (CN2011-ZH PDF) |
25AA02E48
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V SS ......................................................................................................... -0.6V to V CC +1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I):
T A = -40°C to +85°C
V CC = 1.8V to 5.5V
Param.
No.
D001
Sym.
V IH1
Characteristic
High-level Input
Min.
0.7 V CC
Max.
V CC +1
Units
V
Test Conditions
voltage
D002
D003
D004
D005
D006
V IL1
V IL2
V OL
V OL
V OH
Low-level Input
Voltage
Low-level Output
Voltage
High-level Output
-0.3
-0.3
—
—
V CC -0.5
0.3 V CC
0.2 V CC
0.4
0.2
—
V
V
V
V
V
V CC ??? 2.7V (Note 1)
V CC < 2.7V (Note 1)
I OL = 2.1 mA
I OL = 1.0 mA, V CC < 2.5V
I OH = -400 ? A
Voltage
D007
I LI
Input Leakage
—
±1
? A
CS = V CC , V IN = V SS TO V CC
Current
D008
I LO
Output Leakage
—
±1
? A
CS = V CC , V OUT = V SS TO V CC
Current
D009
C INT
Internal Capacitance
—
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note 1)
D010
I CC Read
—
5
mA
V CC = 5.5V; F CLK = 10.0 MHz;
SO = Open
Operating Current
—
2.5
mA
V CC = 2.5V; F CLK = 5.0 MHz;
SO = Open
D011
I CC Write
—
—
5
3
mA
mA
V CC = 5.5V
V CC = 2.5V
D012
I CCS
Standby Current
—
1
? A
CS = V CC = 2.5V, Inputs tied to V CC or
V SS , T A = +85°C
Note:
This parameter is periodically sampled and not 100% tested.
DS22123B-page 2
? 2010 Microchip Technology Inc.
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| 25AA02E48T-I/SN | 功能描述:电可擦除可编程只读存储器 2K, 256x8, 1.8V MAC Addressable RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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