参数资料
型号: 25C080T-E/SN
厂商: Microchip Technology
文件页数: 12/22页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ 8SOIC
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 3MHz
接口: SPI 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
25AA080/25LC080/25C080
3.7
Data Protection
3.8
Power-On State
The following protection has been implemented to
prevent inadvertent writes to the array:
? The write enable latch is reset on power-up
? A WRITE ENABLE instruction must be issued to
set the write enable latch
? After a byte write, page write or Status register
write, the write enable latch is reset
? CS must be set high after the proper number of
clock cycles to start an internal write cycle
? Access to the array during an internal write cycle
is ignored and programming is continued
The 25XX080 powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? The write enable latch is reset
? SO is in high-impedance state
? A high-to-low level transition on CS is required to
enter active state
TABLE 3-3:
WRITE-PROTECT FUNCTIONALITY MATRIX
WPEN
X
0
1
X
WP
X
X
Low
High
WEL
0
1
1
1
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Writable
Writable
Writable
Status Register
Protected
Writable
Protected
Writable
DS21230D-page 12
? 2004 Microchip Technology Inc.
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