参数资料
| 型号： | 25C080T-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 2/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 3MHZ 8SOIC |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 3MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
25AA080/25LC080/25C080
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V SS ........................................................................................................ -0.6V to V CC + 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ......................................................................................................................................... 4 KV
? NOTICE : Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
1.1
DC Characteristics
DC CHARACTERISTICS
Industrial (I): T A = -40°C to +85°C
Automotive (E): T A = -40°C to +125°C
V CC = 1.8V to 5.5V
V CC = 4.5V to 5.5V (25C080 only)
Param.
No.
D001
D002
D003
D004
D005
D006
D007
Sym.
V IH 1
V IH 2
V IL 1
V IL 2
V OL
V OL
V OH
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
Min.
2.0
0.7 V CC
-0.3
-0.3
—
—
V CC -0.5
Max.
V CC +1
V CC +1
0.8
0.3 V CC
0.4
0.2
—
Units
V
V
V
V
V
V
V
Test Conditions
V CC ≥ 2.7V (Note)
V CC < 2.7V (Note)
V CC ≥ 2.7V (Note)
V CC < 2.7V (Note)
I OL = 2.1 mA
I OL = 1.0 mA, V CC < 2.5V
I OH = -400 μ A
voltage
D008
D009
I LI
I LO
Input leakage current
Output leakage
-10
-10
10
10
μ A
μ A
CS = V CC , V IN = V SS TO V CC
CS = V CC , V OUT = V SS TO V CC
current
D010
C INT
Internal Capacitance
—
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note)
D011
I CC Read
—
—
1
500
mA
μ A
V CC = 5.5V; F CLK = 3.0 MHz;
SO = Open
Operating Current
V CC = 2.5V; F CLK = 2.0 MHz;
SO = Open
D012
I CC Write
—
—
5
3
mA
mA
V CC = 5.5V
V CC = 2.5V
D013
I CCS
Standby Current
—
—
5
1
μ A
μ A
CS = V CC = 5.5V, Inputs tied to V CC or
V SS
CS = V CC = 2.5V, Inputs tied to V CC or
V SS
Note:
This parameter is periodically sampled and not 100% tested.
DS21230D-page 2
? 2004 Microchip Technology Inc.
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