参数资料
| 型号： | 25C080T-I/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 12/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 3MHZ 8SOIC |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 3MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
25AA080/25LC080/25C080
3.7
Data Protection
3.8
Power-On State
The following protection has been implemented to
prevent inadvertent writes to the array:
? The write enable latch is reset on power-up
? A WRITE ENABLE instruction must be issued to
set the write enable latch
? After a byte write, page write or Status register
write, the write enable latch is reset
? CS must be set high after the proper number of
clock cycles to start an internal write cycle
? Access to the array during an internal write cycle
is ignored and programming is continued
The 25XX080 powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? The write enable latch is reset
? SO is in high-impedance state
? A high-to-low level transition on CS is required to
enter active state
TABLE 3-3:
WRITE-PROTECT FUNCTIONALITY MATRIX
WPEN
X
0
1
X
WP
X
X
Low
High
WEL
0
1
1
1
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Writable
Writable
Writable
Status Register
Protected
Writable
Protected
Writable
DS21230D-page 12
? 2004 Microchip Technology Inc.
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