参数资料
型号: 25C080T-I/SN
厂商: Microchip Technology
文件页数: 9/22页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ 8SOIC
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 3MHz
接口: SPI 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
25AA080/25LC080/25C080
3.4
Write Enable ( WREN ) and Write
Disable ( WRDI )
The following is a list of conditions under which the
write enable latch will be reset:
The 25XX080 contains a write enable latch. See
Table 3-3 for the Write-Protect Functionality Matrix.
This latch must be set before any write operation will be
completed internally. The WREN instruction will set the
latch, and the WRDI will reset the latch.
FIGURE 3-4:
WRITE ENABLE SEQUENCE
CS
?
?
?
?
Power-up
WRDI instruction successfully executed
WRSR instruction successfully executed
WRITE instruction successfully executed
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1
0
High-impedance
SO
FIGURE 3-5:
WRITE DISABLE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1 0
0
High-impedance
SO
? 2004 Microchip Technology Inc.
DS21230D-page 9
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