参数资料
| 型号： | 25LC040/P |
| 厂商： | Microchip Technology |
| 文件页数： | 10/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8DIP |
| 标准包装： | 60 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (512 x 8) |
| 速度： | 2MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1448 (CN2011-ZH PDF) |
| 其它名称： | 25LC40/P |
25AA040/25LC040/25C040
3.5
Read Status Register (RDSR)
3.6
Write Status Register (WRSR)
The RDSR instruction provides access to the STATUS
register. The STATUS register may be read at any time,
even during a write cycle. The STATUS register is
formatted as follows:
The WRSR instruction allows the user to select one of
four levels of protection for the array by writing to the
appropriate bits in the STATUS register. The array is
divided up into four segments. The user has the ability
7
X
6
X
5
X
4
X
3
BP1
2
BP0
1
WEL
0
WIP
to write-protect none, one, two, or all four of the
segments of the array. The partitioning is controlled as
illustrated in Table 3-2.
The Write-In-Process (WIP) bit indicates whether the
25XX040 is busy with a write operation. When set to a
See Figure 3-7 for WRSR timing sequence.
‘ 1 ’, a write is in progress, when set to a ‘ 0 ’, no write is
in progress. This bit is read-only.
TABLE 3-2:
ARRAY PROTECTION
The Write Enable Latch (WEL) bit indicates the status
of the write enable latch. When set to a ‘ 1 ’, the latch
allows writes to the array, when set to a ‘ 0 ’, the latch
prohibits writes to the array. The state of this bit can
always be updated via the WREN or WRDI commands
regardless of the state of write protection on the
STATUS register. This bit is read-only.
The Block Protection (BP0 and BP1) bits indicate
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction. These
BP1
0
0
1
1
BP0
0
1
0
1
Array Addresses
Write-Protected
none
upper 1/4
(0180h-01FFh)
upper 1/2
(0100h-01FFh)
all
(0000h-01FFh)
bits are nonvolatile.
See Figure 3-6 for RDSR timing sequence.
FIGURE 3-6:
CS
READ STATUS REGISTER SEQUENCE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
SI
0
0
0
0
0
1
0
1
SO
High-impedance
7
Data from STATUS register
6 5 4 3 2 1
0
FIGURE 3-7:
CS
WRITE STATUS REGISTER SEQUENCE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-impedance
SO
DS21204E-page 10
? 2006 Microchip Technology Inc.
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| 25C040-I/P | IC EEPROM 4KBIT 3MHZ 8DIP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 25LC040-SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SPI Serial EEPROM |
| 25LC040ST | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
| 25LC040T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K SPI Bus Serial EEPROM |
| 25LC040T/SN | 功能描述:电可擦除可编程只读存储器 512x8 - 2.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25LC040T-E/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4K SPI ⑩ Bus Serial EEPROM |
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