参数资料
| 型号： | 25LC128T-I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 6/32页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 128KBIT 10MHZ 8DFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
| 其它名称： | 25LC128T-I/MFTR |
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25AA128/25LC128
2.0
FUNCTIONAL DESCRIPTION
2.1
Principles of Operation
2.3
Write Sequence
The 25XX128 is a 16,384 byte Serial EEPROM
designed to interface directly with the Serial Peripheral
Interface (SPI) port of many of today’s popular
microcontroller families, including Microchip’s PIC ?
microcontrollers. It may also interface with microcon-
trollers that do not have a built-in SPI port by using dis-
crete I/O lines programmed properly in firmware to
match the SPI protocol.
The 25XX128 contains an 8-bit instruction register. The
device is accessed via the SI pin, with data being
clocked in on the rising edge of SCK. The CS pin must
be low and the HOLD pin must be high for the entire
operation.
Table 2-1 contains a list of the possible instruction
bytes and format for device operation. All instructions,
addresses and data are transferred MSB first, LSB last.
Data (SI) is sampled on the first rising edge of SCK
after CS goes low. If the clock line is shared with other
peripheral devices on the SPI bus, the user can assert
Prior to any attempt to write data to the 25XX128, the
write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS low
and then clocking out the proper instruction into the
25XX128. After all eight bits of the instruction are
transmitted, the CS must be brought high to set the
write enable latch. If the write operation is initiated
immediately after the WREN instruction without CS
being brought high, the data will not be written to the
array because the write enable latch will not have been
properly set.
Once the write enable latch is set, the user may
proceed by setting the CS low, issuing a WRITE
instruction, followed by the 16-bit address, with two
MSBs of the address being “don’t care” bits, and then
the data to be written. Up to 64 bytes of data can be
sent to the device before a write cycle is necessary.
The only restriction is that all of the bytes must reside
in the same page.
the HOLD input and place the 25XX128 in ‘HOLD’
mode. After releasing the HOLD pin, operation will
resume from the point when the HOLD was asserted.
Note:
Page write operations are limited to writing
bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
2.2
Read Sequence
boundaries start at addresses that are
integer multiples of the page buffer size (or
The device is selected by pulling CS low. The 8-bit
READ instruction is transmitted to the 25XX128 fol-
lowed by the 16-bit address, with two MSBs of the
address being “don’t care” bits. After the correct READ
instruction and address are sent, the data stored in the
memory at the selected address is shifted out on the
SO pin. The data stored in the memory at the next
address can be read sequentially by continuing to pro-
vide clock pulses. The internal Address Pointer is auto-
matically incremented to the next higher address after
each byte of data is shifted out. When the highest
address is reached (3FFFh), the address counter rolls
over to address 0000h, allowing the read cycle to be
continued indefinitely. The read operation is terminated
by raising the CS pin (Figure 2-1).
DS21831E-page 6
‘page size’) and, end at addresses that are
integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the n th data byte has been clocked in. If CS is
brought high at any other time, the write operation will
not be completed. Refer to Figure 2-2 and Figure 2-3
for more detailed illustrations on the byte write
sequence and the page write sequence respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1 and BP0 bits (Figure 2-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
? 2003-2011 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 25LC128X | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25LC128X-E/MF | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25LC128X-E/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25LC128X-E/SN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:128K SPI Bus Serial EEPROM |
| 25LC128X-E/ST | 功能描述:电可擦除可编程只读存储器 128k 32KX8 2.5V SER EE EXT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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